40 CFR Subpart I - Subpart I—Electronics Manufacturing

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  1. § 98.90 Definition of the source category.
  2. § 98.91 Reporting threshold.
  3. § 98.92 GHGs to report.
  4. § 98.93 Calculating GHG emissions.
  5. § 98.94 Monitoring and QA/QC requirements.
  6. § 98.95 Procedures for estimating missing data.
  7. § 98.96 Data reporting requirements.
  8. § 98.97 Records that must be retained.
  9. § 98.98 Definitions.
  10. Table I-1 to Subpart I of Part 98—Default Emission Factors for Manufacturing Capacity-Based Threshold Applicability Determination
  11. Table I-2 to Subpart I of Part 98—Default Emission Factors for Gas Consumption-Based Threshold Applicability Determination
  12. Table I-3 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 150 mm and 200 mm Wafer Sizes
  13. Table I-4 to Subpart I of Part 98— Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 300 mm and 450 mm Wafer Size
  14. Table I-5 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for MEMS Manufacturing
  15. Table I-6 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for LCD Manufacturing
  16. Table I-7 To Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for PV Manufacturing
  17. Table I-8 to Subpart I of Part 98—Default Emission Factors (1-UN2O,j) for N2O Utilization (UN2O,j)
  18. Table I-9 to Subpart I of Part 98—Methods and Procedures for Conducting Emissions Test for Stack Systems
  19. Table I-10 to Subpart I of Part 98—Maximum Field Detection Limits Applicable to Fluorinated GHG Concentration Measurements for Stack Systems
  20. Table I-11 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for Use With the Stack Test Method
  21. Table I-12 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for Use With the Stack Test Method
  22. Table I-13 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for LCD Manufacturing for Use With the Stack Test Method
  23. Table I-14 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for PV Manufacturing for Use With the Stack Test Method
  24. Table I-15 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for MEMS Manufacturing for Use With the Stack Test Method
  25. Table I-16 to Subpart I of Part 98—Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing
  26. Table I-17 to Subpart I of Part 98—Expected and Possible By-Products for Electronics Manufacturing
  27. Table I-18 to Subpart I of Part 98—Default Factors for Gamma (gi,p and gk,i,p) for Semiconductor Manufacturing and for MEMS and PV Manufacturing Under Certain Conditions * for Use With the Stack Testing Method
  28. Table I-19 to Subpart I of Part 98—Reference Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 150 mm and 200 mm Wafer Sizes
  29. Table I-20 to Subpart I of Part 98—Reference Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 300 mm Wafer Sizes
  30. Table I-21 to Subpart I of Part 98—Examples of Fluorinated GHGs Used by the Electronics Industry
  31. Appendix A to Subpart I of Part 98—Alternative Procedures for Measuring Point-of-Use Abatement Device Destruction or Removal Efficiency
Source:
75 FR 74818, Dec. 1, 2010, unless otherwise noted.