40 CFR Subpart I - Subpart I—Electronics Manufacturing

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  1. § 98.90 Definition of the source category.
  2. § 98.91 Reporting threshold.
  3. § 98.92 GHGs to report.
  4. § 98.93 Calculating GHG emissions.
  5. § 98.94 Monitoring and QA/QC requirements.
  6. § 98.95 Procedures for estimating missing data.
  7. § 98.96 Data reporting requirements.
  8. § 98.97 Records that must be retained.
  9. § 98.98 Definitions.
  10. Table I–1 to Subpart I of Part 98—Default Emission Factors for Threshold Applicability Determination
  11. Table I–2 to Subpart I of Part 98—Examples of Fluorinated GHGs Used by the Electronics Industry
  12. Table I–3 to Subpart I of Part 98—Default Emission Factors (1–Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 150 mm and 200 mm Wafer Sizes
  13. Table I–4 to Subpart I of Part 98— Default Emission Factors (1–Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 300 mm and 450 mm Wafer Size
  14. Table I–5 to Subpart I of Part 98—Default Emission Factors (1–Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for MEMS Manufacturing
  15. Table I–6 to Subpart I of Part 98—Default Emission Factors (1–Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for LCD Manufacturing
  16. Table I–7 To Subpart I of Part 98—Default Emission Factors (1–Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for PV Manufacturing
  17. Table I–8 to Subpart I of Part 98— Default Emission Factors (1–UN2O,j) for N2O Utilization (UN2O,j)
  18. Table I–9 to Subpart I of Part 98—Methods and Procedures for Conducting Emissions Test for Stack Systems
  19. Table I–10 to Subpart I of Part 98—Maximum Field Detection Limits Applicable to Fluorinated GHG Concentration Measurements for Stack Systems
  20. Table I–11 to Subpart I of Part 98—Default Emission Factors (1–Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for Use With the Stack Test Method (150 mm and 200 mm Wafers)
  21. Table I–12 to Subpart I of Part 98—Default Emission Factors (1–Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for Use With the Stack Test Method (300 mm and 450 mm Wafers)
  22. Table I–13 to Subpart I of Part 98—Default Emission Factors (1–Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for LCD Manufacturing for Use With the Stack Test Method
  23. Table I–14 to Subpart I of Part 98—Default Emission Factors (1–Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for PV Manufacturing for Use With the Stack Test Method
  24. Table I–15 to Subpart I of Part 98—Default Emission Factors (1–Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for MEMS Manufacturing for Use With the Stack Test Method
  25. Table I–16 to Subpart I of Part 98—Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing
  26. Table I–17 to Subpart I of Part 98—Expected and Possible By-Products for Electronics Manufacturinglg
  27. Appendix A to Subpart I of Part 98—Alternative Procedures for Measuring Point-of-Use Abatement Device Destruction or Removal Efficiency
Source:
75 FR 74818, Dec. 1, 2010, unless otherwise noted.