40 CFR Appendix Table I-16 to Subpart I of Part 98 - Table I–16 to Subpart I of Part 98—Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing

Table I–16 to Subpart I of Part 98—Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing
Manufacturing type/process type/gas Default
DRE
(percent)
MEMS, LCDs, and PV Manufacturing 60
Semiconductor Manufacturing:
Plasma Etch/Wafer Clean Process Type:
CF4 75
CH3F 97
CHF3 97
CH2F2 97
C2F6 97
C3F8 97
C4F6 97
C4F8 97
C5F8 97
SF6 97
NF3 96
All other carbon-based plasma etch/wafer clean fluorinated GHG 60
Chamber Clean Process Type:
NF3 88
All other chamber clean fluorinated GHG 60
N2O Processes:
CVD and all other N2O-using processes 60
[78 FR 68234, Nov. 13, 2013]